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    4寸晶棒

    2014-08-31




    Item


    4"Specification

    Unit

    Remark


    Substrate grade


    Sapphire Ingot

    ~

     


    Crystal growth method


    Kyropulos Al2O3 or another on agreement

    ~

     


    Optical Characteristic


    High purity optical grade monocrystalline

    ~

     


    Orientation


    C-plane(0001) ±0.1

    ~

     


    Diameter of ingot


    100.2,±0.1?

    mm

     


    Length of Prime flat


    30.0±0.5

    mm

     


    Orientation of Prime flat


    A-plane(1 1-2 0)± 0.2?

    ~

     


    Rod Length


    50

    mm

     


    Surface Finish


    Circumference surface Ra < 1 μm; Both ends surface Ra < 1 μm

    μm

     


    Chip size on both sides

    < 0.5 mm x 0.5 mm

    ~

     

    Crystal Bubble/Defects Percentage


    < 15%

    ~


    Defects zones include bubbles, scattering centers, grain boundary, twinning, inclusion, stress distortion, and cracks inside. Defect zones need to be marked。


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